NaBi(MoO4)2 crystal: Defect states and luminescence properties for optoelectronic applications

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dc.authoridIsik, Mehmet/0000-0003-2119-8266
dc.contributor.authorIsik, M.
dc.contributor.authorAltuntas, G.
dc.contributor.authorGasanly, N. M.
dc.contributor.authorDarvishov, N. H.
dc.date.accessioned2025-03-20T09:51:08Z
dc.date.available2025-03-20T09:51:08Z
dc.date.issued2025
dc.departmentİzmir Bakırçay Üniversitesi
dc.description.abstractThis paper investigates the electronic and optical properties of NaBi(MoO4)2 crystal through absorbance, thermally stimulated current (TSC), and photoluminescence (PL) measurements. Absorbance analysis revealed important information about the bandgap and the degree of disorder within the material. The bandgap energy of the compound was found to be 2.94 eV. TSC measurements revealed the presence of hole defect centers and provided information regarding charge transport mechanisms. Two TSC peaks were observed at temperatures of 69.3 and 127.5 K, and the activation energies of the trap centers associated with these peaks were found to be 0.05 and 0.14 eV. Two PL peaks were observed around 487 and 536 nm corresponding to the blue and green emissions, respectively. These findings provide a comprehensive understanding the band structure of the NaBi (MoO4)2, highlighting its suitability for use in optoelectronic devices, sensors, and light-emitting applications.
dc.identifier.doi10.1016/j.matlet.2025.137990
dc.identifier.issn0167-577X
dc.identifier.issn1873-4979
dc.identifier.scopus2-s2.0-85214132920
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.matlet.2025.137990
dc.identifier.urihttps://hdl.handle.net/20.500.14034/2437
dc.identifier.volume383
dc.identifier.wosWOS:001414198200001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofMaterials Letters
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250319
dc.subjectDefects
dc.subjectMolybdate
dc.subjectLuminescent properties
dc.subjectOptical properties
dc.subjectNaBi(WO4)2
dc.titleNaBi(MoO4)2 crystal: Defect states and luminescence properties for optoelectronic applications
dc.typeArticle

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