NaBi(MoO4)2 crystal: Defect states and luminescence properties for optoelectronic applications
Küçük Resim Yok
Tarih
2025
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
This paper investigates the electronic and optical properties of NaBi(MoO4)2 crystal through absorbance, thermally stimulated current (TSC), and photoluminescence (PL) measurements. Absorbance analysis revealed important information about the bandgap and the degree of disorder within the material. The bandgap energy of the compound was found to be 2.94 eV. TSC measurements revealed the presence of hole defect centers and provided information regarding charge transport mechanisms. Two TSC peaks were observed at temperatures of 69.3 and 127.5 K, and the activation energies of the trap centers associated with these peaks were found to be 0.05 and 0.14 eV. Two PL peaks were observed around 487 and 536 nm corresponding to the blue and green emissions, respectively. These findings provide a comprehensive understanding the band structure of the NaBi (MoO4)2, highlighting its suitability for use in optoelectronic devices, sensors, and light-emitting applications.
Açıklama
Anahtar Kelimeler
Defects, Molybdate, Luminescent properties, Optical properties, NaBi(WO4)2
