Revealing the Effects of Defect States on the Nonlinear Absorption Properties of the TlInsse and Tl2In2S3Se Crystals in Near-Infrared Optical Limiting Applications

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dc.authoridKARATAY, Ahmet/0000-0001-9373-801X
dc.contributor.authorDogan, Anil
dc.contributor.authorKaratay, Ahmet
dc.contributor.authorIsik, Mehmet
dc.contributor.authorYildiz, Elif Akhuseyin
dc.contributor.authorGasanly, Nizami Mamed
dc.contributor.authorElmali, Ayhan
dc.date.accessioned2025-03-20T09:51:04Z
dc.date.available2025-03-20T09:51:04Z
dc.date.issued2024
dc.departmentİzmir Bakırçay Üniversitesi
dc.description.abstractThe present study represents the effect of defect states on the nonlinear absorption and optical limiting performances of TlInSSe and Tl2In2S3Se single crystals with near-infrared excitations. The band gap energies were 2.2 and 2.22 eV, and the Urbach energies were 0.049 and 0.034 eV for TlInSSe and Tl2In2S3Se, respectively. The trapping time of localized defect states was found to be 8 ns by femtosecond transient absorption measurements. The analysis of open-aperture Z-scan data depends on two different fitting models to determine the effect of defect states on the nonlinear absorption (NA) properties of the studied crystals. Model 1 only considers two-photon absorption (TPA), while model 2 includes one-photon absorption (OPA), TPA, and free carrier absorption (FCA). The NA coefficients (ss(eff)) obtained from model 2 are higher than the values (ss) obtained from model 1 at the same intensities, revealing that defect states contribute to NA through OPA. The optical limiting properties of the TlInSSe and Tl2In2S3Se crystals were examined under 1064 nm wavelength excitation. The limiting thresholds were found to be 1.16 and 0.27 mJ/cm(2) at 29.8 GW/m(2) and 99.5 GW/m(2) input intensities, respectively. The results show that TlInSSe and Tl2In2S3Se crystals have promising potential for near-infrared optical limiting applications.
dc.identifier.doi10.1021/acs.cgd.4c00606
dc.identifier.endpage6990
dc.identifier.issn1528-7483
dc.identifier.issn1528-7505
dc.identifier.issue17
dc.identifier.scopus2-s2.0-85201599084
dc.identifier.scopusqualityQ1
dc.identifier.startpage6981
dc.identifier.urihttps://doi.org/10.1021/acs.cgd.4c00606
dc.identifier.urihttps://hdl.handle.net/20.500.14034/2397
dc.identifier.volume24
dc.identifier.wosWOS:001293321600001
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAmer Chemical Soc
dc.relation.ispartofCrystal Growth & Design
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250319
dc.subject2-Photon Absorption
dc.subjectThin-Films
dc.subjectUltrafast Dynamics
dc.subjectSingle-Crystal
dc.subjectBehaviors
dc.subjectRatio
dc.subjectChalcogenides
dc.subjectTemperature
dc.subjectDependence
dc.subjectTlgase2
dc.titleRevealing the Effects of Defect States on the Nonlinear Absorption Properties of the TlInsse and Tl2In2S3Se Crystals in Near-Infrared Optical Limiting Applications
dc.typeArticle

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