Revealing the Effects of Defect States on the Nonlinear Absorption Properties of the TlInsse and Tl2In2S3Se Crystals in Near-Infrared Optical Limiting Applications

Küçük Resim Yok

Tarih

2024

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Amer Chemical Soc

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

The present study represents the effect of defect states on the nonlinear absorption and optical limiting performances of TlInSSe and Tl2In2S3Se single crystals with near-infrared excitations. The band gap energies were 2.2 and 2.22 eV, and the Urbach energies were 0.049 and 0.034 eV for TlInSSe and Tl2In2S3Se, respectively. The trapping time of localized defect states was found to be 8 ns by femtosecond transient absorption measurements. The analysis of open-aperture Z-scan data depends on two different fitting models to determine the effect of defect states on the nonlinear absorption (NA) properties of the studied crystals. Model 1 only considers two-photon absorption (TPA), while model 2 includes one-photon absorption (OPA), TPA, and free carrier absorption (FCA). The NA coefficients (ss(eff)) obtained from model 2 are higher than the values (ss) obtained from model 1 at the same intensities, revealing that defect states contribute to NA through OPA. The optical limiting properties of the TlInSSe and Tl2In2S3Se crystals were examined under 1064 nm wavelength excitation. The limiting thresholds were found to be 1.16 and 0.27 mJ/cm(2) at 29.8 GW/m(2) and 99.5 GW/m(2) input intensities, respectively. The results show that TlInSSe and Tl2In2S3Se crystals have promising potential for near-infrared optical limiting applications.

Açıklama

Anahtar Kelimeler

2-Photon Absorption, Thin-Films, Ultrafast Dynamics, Single-Crystal, Behaviors, Ratio, Chalcogenides, Temperature, Dependence, Tlgase2

Künye