Florür ve oksit tabanlı nanomalzemeler kullanılarak üretilen metal-polimer-yarıiletken (MPY) yapıdaki schottky bariyer diyotlar ile yüksek frekans memristör
Küçük Resim Yok
Tarih
2024
Yazarlar
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Yayıncı
İzmir Bakırçay Üniversitesi Lisansüstü Eğitim Enstitüsü
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
Bu tez çalışmasında PCPDTBT{Poli[2,6-(4,4-bis-(2-etilheksil)-4H-siklopenta[2,1- b;3,4-b']ditiyofen)-alt-4,7 (2,1,3- benzotiadiazol)]}, PCPDTBT:BaSiF6 (Heksaflorosilik asit ), PCPDTBT:MoO3 (Molibden trioksit) konsantrasyonları katman katman hazırlanarak Schottky bariyer diyot (SBD) ara katmanı olarak kullanılmıştır. Üretilen SBD'nin farklı frekanslarda akım-gerilim değerleri ölçülmüştür. Yapılan ölçümlerden elde edilen sonuçlara göre elektriksel parametreler analiz edilerek engel yüksekliği, idealite faktörü ve doyma akımı değerleri hesaplanarak farklı frekans değerlerindeki karakteristik değişimleri izlenmiştir. Literatürde yer alan diyotlar genelde 10 kHz-100 kHz arası çalışmaya elverişli olduğu gözlemlenmiştir. Bu değerin şimdiye kadar literatürde en yüksek 1 MHz'i görmüştür. Bu tez çalışması ile ilk kez bu frekans değeri 3 MHz'e çıkmış olup öngörüldüğü üzere SBD' nin, memristörün çalışma frekansını yükselttiğini tespit etmiştir. Elektriksel karakterizasyon testleri göz önünde bulundurulduğunda katkısız PCPDTBT organik malzemesiyle yapılan ölçümlerde 3 MHz frekans değerinde diğer PCPDTBT:BaSiF6 ve PCPDTBT:MoO3 organik malzemelerine nazaran en verimli sonuç alındığı gözlemlenmiştir.
In this thesis, concentrations of PCPDTBT {Poly[2,6-(4,4-bis-(2-ethylhexyl)-4H cyclopenta[2,1-b;3,4-b']dithiophene)-alt-4,7(2,1,3-benzothiadiazole)]}, PCPDTBT:BaSiF6 (Hexafluorosilicic acid), and PCPDTBT:MoO3 (Molybdenum trioxide) were prepared layer by layer and used as an interlayer in Schottky barrier diodes (SBD). The current-voltage characteristics of the fabricated SBDs were measured at different frequencies. Based on the results obtained from these measurements, electrical parameters were analyzed, and barrier height, ideality factor, and saturation current values were calculated to observe characteristic changes at different frequency values. In the literature, diodes are generally observed to operate within the range of 10 kHz to 100 kHz. The highest frequency reported in the literature so far has been 1 MHz. In this thesis, for the first time, this frequency value has been increased to 3 MHz, and it has been determined, as predicted, that the operating frequency of the SBD (Schottky Barrier Diode) and memristor increases. Considering the electrical characterization tests, it was observed that the most efficient results at a frequency of 3 MHz were obtained with the undoped PCPDTBT organic material, compared to the PCPDTBT: MoO3 and PCPDTBT: BaSiF6 organic materials.
In this thesis, concentrations of PCPDTBT {Poly[2,6-(4,4-bis-(2-ethylhexyl)-4H cyclopenta[2,1-b;3,4-b']dithiophene)-alt-4,7(2,1,3-benzothiadiazole)]}, PCPDTBT:BaSiF6 (Hexafluorosilicic acid), and PCPDTBT:MoO3 (Molybdenum trioxide) were prepared layer by layer and used as an interlayer in Schottky barrier diodes (SBD). The current-voltage characteristics of the fabricated SBDs were measured at different frequencies. Based on the results obtained from these measurements, electrical parameters were analyzed, and barrier height, ideality factor, and saturation current values were calculated to observe characteristic changes at different frequency values. In the literature, diodes are generally observed to operate within the range of 10 kHz to 100 kHz. The highest frequency reported in the literature so far has been 1 MHz. In this thesis, for the first time, this frequency value has been increased to 3 MHz, and it has been determined, as predicted, that the operating frequency of the SBD (Schottky Barrier Diode) and memristor increases. Considering the electrical characterization tests, it was observed that the most efficient results at a frequency of 3 MHz were obtained with the undoped PCPDTBT organic material, compared to the PCPDTBT: MoO3 and PCPDTBT: BaSiF6 organic materials.
Açıklama
Anahtar Kelimeler
Elektrik ve Elektronik Mühendisliği, Electrical and Electronics Engineering
