Identification of shallow trap centers in InSe single crystals and investigation of their distribution: A thermally stimulated current spectroscopy

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dc.authoridIsik, Mehmet/0000-0003-2119-8266
dc.contributor.authorIsik, M.
dc.contributor.authorGasanly, N. M.
dc.date.accessioned2025-03-20T09:51:07Z
dc.date.available2025-03-20T09:51:07Z
dc.date.issued2024
dc.departmentİzmir Bakırçay Üniversitesi
dc.description.abstractIdentification of trap centers in semiconductors takes great importance for improving the performance of electronic and optoelectronic devices. In the present study, we employed the thermally stimulated current (TSC) method within a temperature range of 10-280 K to explore trap centers in InSe crystal-a material with promising applications in next-generation devices. Our findings revealed the existence of two distinct hole trap centers within the InSe crystal lattice located at 0.06 and 0.14 eV. Through the leveraging the T-stop method, we offered trap distribution parameters of revealed centers. The results obtained from the experimental methodology employed to investigate the distribution of trap centers indicated that one of the peaks extended between 0.06 and 0.13 eV, while the other spanned from 0.14 to 0.31 eV. Notably, our research uncovers a remarkable variation in trap density, spanning one order of magnitude, for every 10 and 88 meV of energy variation. The results of our research present the characteristics of shallow trap centers in InSe, providing important information for the design and optimization of InSe-based optoelectronic devices.
dc.identifier.doi10.1016/j.optmat.2024.116011
dc.identifier.issn0925-3467
dc.identifier.issn1873-1252
dc.identifier.scopus2-s2.0-85202301614
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.optmat.2024.116011
dc.identifier.urihttps://hdl.handle.net/20.500.14034/2429
dc.identifier.volume156
dc.identifier.wosWOS:001306099800001
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofOptical Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250319
dc.subjectInSe
dc.subject2D materials
dc.subjectDefects
dc.subjectTSC
dc.subjectThermoluminescence
dc.subjectOptoelectronic devices
dc.titleIdentification of shallow trap centers in InSe single crystals and investigation of their distribution: A thermally stimulated current spectroscopy
dc.typeArticle

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