Uçar, Z. G. PortakalKaynar, Ümit H.Doğan, T.Souadi, G. O.Ayvacıklı, M.Canımoğlu, A.Can, N.2022-02-152022-02-1520200925-34671873-1252https://doi.org/10.1016/j.optmat.2020.109852https://hdl.handle.net/20.500.14034/474This article presents a detailed analysis of beta ray exposed thermoluminescence response of a series of Eu3+ doped (0.5-10 mol%) Mg2SiO4 nanocrystalline samples successfully synthesized through solid state reaction method. Optimizing the doping concentration of Eu3+ ion in Mg2SiO4 phosphor was found as 3 mol%. Two main peaks were seen at 246 degrees C and 374 degrees C and also low temperature peak at 78 degrees C. The intensities of these peaks were increased linearly with increasing beta absorbed dose. T-m-T-stop method was used to reveal trap levels. Variable heating rate and computerized glow curve deconvolution methods were also used to evaluate the number of peaks and kinetic parameters, namely activation energy and frequency factor. The results of a series of experiments carried out to investigate some fading characteristics of Mg2SiO4:Eu3+ were also presented. The findings suggest that thermoluminescence properties of Mg2SiO4:Eu(3+ )makes this material suitable and promising dosimetric phosphor material for medical applications.eninfo:eu-repo/semantics/closedAccessMg2SiO4DopingThermoluminescenceTrap parametersLuminescenceDyPhosphorSpectraSm3+TbArticle10.1016/j.optmat.2020.109852104Q2WOS:0005375718000132-s2.0-85082824795Q1